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 Product Bulletin OP906 June 1996
PIN Silicon Photodiode
Type OP906
Features *Narrow receiving angle *Linear response vs irradiance *Fast switching time *T-1 package style *Small package ideal for space limited
applications
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in nA, use the formula ID = 10(0.042 TA-1.5) where TA is ambient temperature in o C.
Description
The OP906 device consists of a PIN silicon photodiode molded in a clear epoxy package which allows spectral response from visible to infrared light wavelengths. The narrow receiving angle provides excellent on-axis coupling. These devices are 100% production tested using infrared light for close correlation with Optek' GaAs and s GaAlAs emitters. Lead spacing is 0.100 inch (2.54 mm).
Typical Performance Curves
Relative Response vs. Wavelength
Coupling Characteristics OP906 and OP266
VR = 5 V IF = 20 mA
- Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 3-54
Distance Between Lens Tips -inches (972) 323-2200 Fax (972) 323-2396
Type OP906
Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL
IL ID V(BR)R VF CT tr, tf
PARAMETER
Reverse Light Current Reverse Dark Current Reverse Breakdown Voltage Forward Voltage Total Capacitance Rise Time, Fall Time
MIN TYP MAX UNITS
16 1 60 1.2 4 5 35 60 A nA V V pF ns
TEST CONDITIONS
VR = 5 V, Ee = 0.50 mW/cm2(3) VR = 30 V, Ee = 0 IR = 100 A IF = 1 mA VR = 20 V, Ee = 0, f = 1.0 MHz VR = 20 V, = 850 nm, RL = 50
Typical Performance Curves
Normalized Light Current vs Reverse Voltage
Total Capacitance vs Reverse Voltage
Normalized Light and Dark Current vs Ambient Temperature VR = 5 V = 935 nm Normalized to TA = 25o C
TA = 25o C Ee = 0 mW/cm2 f = 1 MHz TA = 25o C = 935 nm Normalized to VR = 5 V
Light Current
Dark Current
VR - Reverse Voltage - V
VR - Reverse Voltage - V
TA - Ambient Temperature - oC
Light Current vs. Irradiance
Switching Time Test Circuit
Light Current vs. Angular Displacement
VR = 5 V TA = 25oC = 935 nm
Test Conditions: = 935 nm VR = 5 V Distance Lens to Lens = 1.5 inches
Ee - Irradiance - mW/cm2
- Angular Displacement - Deg.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-55


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